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This result indicates that CdTe x S(1 − x) QDs are good candidates for LED applications.
This review summarizes recent research on GaN nanostructures for light-emitting diode (LED) applications.
Based on the thermal analysis results, NiO film is suggested to be a suitable thermal interface material for use in high power LED applications.
The optimum textured composite AZO thin film can not only improve LED performance but also effectively substitute flat TCLs in AlGaInP LED applications.
In this work, we propose a TCO electrode scheme of gallium oxide nanoparticle/single-walled carbon nanotube (Ga2O3 NP/SWNT) layer, consisting of undoped Ga2O3 NPs for high transmittance and SWNT for high conductivity, for deep UV LED applications.
Semiconductor nanoparticles termed quantum dots (QDs) have drawn wide attention in recent years as light-emitting source for light-emitting diode (LED) applications, whose emission spectrum with narrow linewidth can be tuned by changing the energy bandgaps with the variation in QD sizes and shapes [1 7].
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These fabricated oxide-encapsulated GaN nanoparticles can be used as phosphor for tunable-color-temperature white LED application.
In the worst case, it leads applications to send data to all nodes inside the network.
In many ways, the reactor delivered, becoming a foundation of scientific discovery that led to applications in a variety of fields.
These have led to applications ranging from phylogeographical reconstructions to forensic analyses and species identification [ 1, 2].
iOS led the Application Platform Mix primarily because iPad application revenue doubled month-over-month.
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