Sentence examples for leading to interface from inspiring English sources

The sintering temperature increase provided a higher liquid fraction leading to interface cohesion but coarse porosity development.

More recently it has been shown that atomic-layer-deposited (ALD) aluminum oxide (Al2O3) provides an outstanding level of surface passivation, which can be attributed to its extremely high negative fixed charge density in combination with the very gentle deposition technique ALD, leading to low interface state densities.

Yet, not all pathways leading to or interfacing with NF-κB responded to virus in our studies.

With increasing exposure time, the amount of voids at the interface increases, leading to a filament interface structure.

Time from index surgery should be related especially to the accumulation of fatigue changes that, in conjunction with increasing size of bone defects, compromise the prosthetic-bone interface leading to degradation of fixation interface with loosening of the implant.

These confined water clusters are not static but are dynamic in nature, fluctuating with bulk water and lubricating polymerase DNA interactions, leading to a dynamic interface with a different level of mobility for a loose or tight binding interface.

However, the LED dies exposed to a high working temperature may increase the risk of void formation in the bonding interface structure, leading to a crack or interface failure due to the bond strength degradation.

Unfortunately, this is a fairly awkward design decision, leading to a cluttered interface and likely just as many accidental taps as intentional ones.

Fig. 1 Illustration of evolution of a flat heterojunction (HJ) for charge separation into various HJ configurations leading to the increased interface area: textured, nanorod/nanowire/nanoparticle network, branched core-shell morphology.

The metal ions in HfO2 and TiO2 have the same identical chemical valence of +4, leading to the less interface charged defects such as oxygen vacancies between two interfacial layers (ILs) of trilayer HfO2/TiO2/HfO2.

Al2O3 layer not only enables excellent chemical passivation due to strong coordination of Si and O [18] and selective hydrogenation leading to a low interface state density after annealing [19], but also, it provides a strong field effect passivation through a high concentration of fixed negative charges [20] that leads to repulsion of charge carriers from the entire surface [21].