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Figure 2 shows the current voltage (I V) characteristics of the Cr/ITO contact layers, measured between ohmic pads.
Fig. 2 Optical thickness of three cloud layers measured by the entry probes summarized by James et al. (1997).
Additionally, root-mean-square surface roughness (Rrms) of the electrode layers measured by atomic force microscopy (AFM) is less than 1 nm.
Spectra of the cross-section of the loaded PSi layers measured with one micron spatial resolution allowed detecting the penetration of the drug in the PSi pores.
The Nomarski microscopy showed that the surface of specially prepared layers was flat and the composition of layers, measured by Fourier transform infrared microscopy, was homogenous.
The maximum hardness of multiple TiAlN layers measured by nanoindentation was 43 GPa, while the TiAlN monolayer exhibited the maximum hardness of 30 GPa in the same chamber.
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6 Although both SLO and OCT use scanning laser beams, a typical SLO uses a single detector that collects the light reflected from all the retinal layers measuring an overall reflectance.
The green colour corresponds to mean Bi composition in GaAsBi layer measured by EDX.
The largest thickness of the oxide layer measured was 7.94 μm while the smallest thickness was 4.37 μm.
Figure 7 shows the carrier lifetime of the a-SiC passivation layer measured by a silicon wafer lifetime tester with the function of Si target power.
Figure 5 displays the CV characteristics of the 5.8-nm-thick Au layer measured at room temperature [RT] and at a temperature of 90 K (LN2).
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