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At the ignition stage, the balance of (BO)n on the liquid oxide layer surface was considered.
Additionally, the composition was determined by energy dispersive X-ray spectroscopy (EDS) with an INCA-Energy EDS (Oxford Instruments, Oxfordshire, UK) attached to the FE-SEM; and the seed-textured ZnO layer surface was analyzed by atomic force microscopy (AFM).
The GaN buffer layer surface was roughened concurrently with etching of the AlInN, although the DAE solution has no effect on as-grown GaN (0 0 0 1) surfaces.
Evidence for segregation of Ti towards the Pd top layer surface was provided by angle-resolved XPS and EFTEM.
Segregation of Ti at the Pd top layer surface was found to occur by means of angle-resolved XPS (ARXPS) and the EFTEM analyses.
The area of the fluorescent lens capsule epithelium specimens was determined after one and two weeks of culture using image processing software (ImageJ, National Institutes of Health, USA) and the increase in cell layer surface was calculated.
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The RMS roughness of the approximately 5-nm-thick Ga2O3 layer surface is 2.7 nm.
An axonometric AFM image of the Au layer surface is presented in Figure 1b.
The bottom part of the pore structures with barrier layer surface is shown on the inset.
In the oxidation process, the aluminide layer surface is selectively oxidized to form an Al2O3 film.
Therefore, the ZnO seed layer surface is charged by the surface amphoteric reaction with H+ or OH− ions.
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