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The gradient layer structure was designed to improve its absorbing properties.
Maximal bandwidth-efficiency product (BEP) value could be achieved when the epitaxial layer structure was optimized.
A double emitting layer structure was also employed in OLEDs by utilizing phosphorescent materials doped in two different hosts.
The layer structure was Kapton/Al/Cr/P3HT PCBM/PEDOT PSS/Ag (printed) and devices were encapsulated.
As soon as CA-LAM disappeared by melting, coexistence of hexagonally packed cylinder (HEX) and layer structure was confirmed.
The LB film layer structure was demonstrated by low-angle X-ray diffraction and the average layer spacing were obtained according to the Bragg equation.
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A dielectric-metal-dielectric (DMD) layer structure is a low-energy film structure.
It can be seen that the double layer structure is highly sensitive to the quantum parameter.
A typical GaN epitaxial layer structure is illustrated in Fig. 1a.
The characteristics of different porous layer structure were summarized in Table 2.
In addition, more details of the data link layer structure are provided later in this article.
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