Sentence examples for layer of resist from inspiring English sources

The process generally consists of three main stages as follows: A 10-mm-wide polyethylene terephthalate (PET) film is first fed into the system where it is coated with a thin layer of resist.

The nanofabrication process used in this work was accomplished in four steps as shown in Fig. 1: (a) thin layer of resist polymer spun over cover glass substrate; (b) electron-beam writing; (c) growth of ZnO nanorods arrays in solution; and (d) lift-off resist material and residue from the substrate.

Figure 1 Schematic illustration of selective growth process of ZnO nanorod arrays: a thin layer of resist polymer (PMMA) spun over cover glass substrate; b pattern transfer by electron-beam lithography; c growth of aligned ZnO nanorod arrays in solution, and d lift-off resist material and residue from the substrate.

For very thick layers of resist, i. e., d >> λ/2π, the decay time is independent on resist thickness.

This result was due to the strengthening phase of the clad layer to resist the plastic flow of the matrix during impacting of the particles, in which the erosive wear resistance of the impacted surface was enhanced.

A 350-nm layer of positive resist ZEP520A (Zeon Co., Tokyo, Japan) was spun at 4,000 rpm on the Ti mask.

Grey scale lithography has been used to produce the microstructures by a single UV exposure into a layer of thick resist.

Two steps of reactive ion etching (RIE) were performed to transfer the structure into the Si substrate: the residual layer of the resist was removed using inductively coupled plasma RIE, and then the structure was transferred into the Si using RIE.

As stitch density increases, the drawing-in measurement value reduced due the formation of more rigid layer to resist the deformation.

The photoresist layer, together with the procedures of exposure, developing and removal of resist, could be eliminated.

Based on the binary nature of the lithography process, this technology demonstrates much higher process latitude and a possibility of resist structure formation with 20 40 different heights in a relatively thick resist layer.