This is partly due to difficulty in preparation of single crystalline TMD films with large uniformity.
The huge number of active sites (CNTs) for both heating and bubble nucleation and the possibility to fine-tune the heating energy provide large uniformity and an extra control over the bubble growth, to generate well-expanded, fine-celled, uniform, relatively thick foams.
They can also result in significant surface roughness which hinders large area uniformity.
Yet, sputtering is the most commonly used technique due to their thickness controllability, large area uniformity, low temperature, and less-toxic process.
The advantages of the MLD technique combined with ALD include accurate control of film thickness, good reproducibility, large-scale uniformity, multilayer processing ability, and excellent film qualities.
Atomic layer deposition (ALD) has emerged as an important technique for a variety of applications based on large area uniformity, precise thickness control, and highly conformal deposition.
The TiOPDA-TiO2 nanohybrid thin films that were prepared exhibit good thermal and mechanical stability, large-scale uniformity, and sharp interfaces.
Atomic layer deposition (ALD) has distinguished advantages over others for its precise thickness control, extremely conformal surface coating for nanostructures, large area uniformity, and low growth temperature [19-21] [19-21]
Silicon (Si) micro-trenches with large-area uniformity and tunable taped sidewalls were prepared using a metal-assisted chemical etching (MaCE) process.
Compared to CVD, PECVD, and chemical solution method, it exhibits unique advantages, including large area uniformity, excellent three-dimensional conformality, precise and simple control of film-thickness, flexible surface modification, and low processing temperature [38].
