Sentence examples for junction element from inspiring English sources

For this configuration and within steady state condition, the pure BAM model for cross junction element implies that: left{begin{array}{c}hfill {C}_4^{bulk}={C}_1hfill hfill {C}_3^{bulk}=frac{Q_2{C}_2+left({Q}_1-{Q}_4right){C}_1}{Q_3}hfill end{array}right.

CRJE stands for "Conserved Recombination Junction Element" because it could be involved in recombination events that cause the MSG gene at the expression site to change [ 62].

CRJE: Conserved Recombination Junction Element; MSG: Major Surface Glycoprotein; MSR: MSG-related; UCS: Upstream Conserved Sequence; HV1: Hypervariable Region 1; VSG: Variable Surface Glycoprotein; INDELS: Insertions and/or deletions; Non syn: non synonymous; Syn: synonymous.

As an example, we discovered that the preformed tertiary proximities detected by MCM in the ligand-free riboswitch aptamer depend critically on at least one junction element, a leader sequence that was missed in crystallographic studies but later shown to stabilize a K-turn linker between the aptamers (Kladwang et al., 2012a; Esquiaqui et al., 2014; Ruff and Strobel, 2014).

Crosses indicate the maximum and minimum values of the junction elements for each (sigma_{3}).

The creation, the development and the confection of new junction elements were described, and case studies of new products developed specifically with this purpose were presented.

The applications of bionic methodology developed by the Laboratory of Design and Material Selection as basis in the creation of junction elements were demonstrated.

When (sigma_{3}) was 160 MPa (Case C, Fig. 7c), (S_{text{H}}) values equal to or smaller than 1.24 were not feasible because of the negative yield stress in junction elements (gray area in Fig. 7c).

The monatomic linear carbon wire (MLCW) systems are expected in this context to have potentially interesting technological applications, in particular as connecting junction elements between larger device components [2].

When (sigma_{1}) and (sigma_{3}) were 100 and 50 MPa, respectively (case A, Fig. 7a), the yield stress was negative (i.e., (mu_{0} > mu_{text{s}})) in junction elements for cases with an (S_{text{H}}) value smaller than 0.58 (gray area in Fig. 7a).

For small (S_{text{H}}) values indicated by gray, (mu_{text{s}}) is smaller than (mu^{text{r}} = {{tau^{text{r}} } mathord{left/ {vphantom {{tau^{text{r}} } {sigma_{text{n}}^{text{r}} }}} right. kern-0pt} {sigma_{text{n}}^{text{r}} }}) in junction elements.