Exact(4)
The ion beam intensities were optimized by adjusting the torch position, gas flows and ion focus settings.
Prototype devices were constructed using gallium ion Focus Ion Beam (FIB), Gas Injection System (GIS) and Scanning Electron Microscope (SEM) crossbeam instruments.
Analytical calculations and simulations with the Charged Particle Optics (CPO) code are used to investigate the potential for movement of the residual ion focus due to space charge effects.
Optimal values were as follows: ionization energy of 70 eV, emission current of 40 mA, cathode voltage of 27 mV, ion focus voltage of 85 mV and lens compensation voltage of 20 V. A GC-MS method for the determination of krypton and xenon in atmosphere without sample pretreatment was developed.
Similar(56)
After the simulation of ion focusing effect and ion focusing methods, the experiment of FAIMS chips with ion focusing is conducted.
This method combines FAIMS and ion focusing method such as ion lens and ion funnel together.
In the simulation of ion focusing methods, the focus structure is shown in Figure 5.
Figure 17 PCB layout of the upper substrate plate in FAIMS chip with ion focusing.
Figure 18 PCB layout of the lower substrate plate in FAIMS chip with ion focusing.
After the above theory analysis, SIMION was used to conduct the simulation of the FAIMS resolution with ion focusing.
In this work, we provide a comprehensive understanding of the radial ion focusing mechanism in the periodic-focusing DC ion guide (PDC IG).
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