Sentence examples for inversion depletion from inspiring English sources

The MSM devices exhibited an inversion, depletion and accumulation modes within a voltage range of 0.25 V width at 250 MHz.

A MOSFET capacitor can be divided into three different regions: accumulation, depletion, and inversion.

All the capacitors show well-defined accumulation, depletion, and inversion regions in the C-V curves.

The fin width is shown to have a large impact on some analogue figures of merit such as the Early voltage because it determines the existence of volume inversion, full or partial depletion inside the fins.

Except S4 (33 at.% of excess Si), all other capacitors exhibit a sharp transition from accumulation and depletion to inversion, indicating the presence of less number of interface traps in the samples.

The reason for gain reduction is insufficient population inversion due to excessive pump depletion.

Concentrations and mobilities of these charge carriers are significantly changed at or near interfaces (or more generally higher dimensional defects) giving rise to depletion, accumulation, and inversion layers with respect to ionic and electronic carriers and hence to distinct electrical and chemical effects.

We compare the case of GaAs/AlGaAs/GaAs/AlGaAs/GaAs NW RTDs which may conduct current with smaller applied voltages but require doping since the Fermi level is pinned at the middle of the gap giving rise to depletion rather than inversion which occurs at the surface of InAs/InP/InAs/InP/InAs core-shell NW RTDs.

To obtain the interfacial trap distribution within the band gap, the MIS capacitor is biased just at the limit between depletion and weak inversion, and a pulse high enough to drive the capacitors into the accumulation regime is then applied in order to fill all interfacial traps.

The results show that the proposed method can effectively solve the problem of particle degradation and depletion in the attitude inversion method on account of PF, and the problem that UKF is not suitable for the strong non-linear attitude inversion.

The sensors are n+ n devices to allow partial depletion operation after bulk type inversion.