This behavior is due to strain relaxation induced by the introduction of dislocations at the interface between InAs and GaAs.
However, the introduction of dislocations at ion-implanted interfaces possibly increases recombination diffusion dark current, consequently reducing Voc.
Unfortunately, fabrication of InAs QDs on GaAs(111) by Stranski Krastanow growth mode is impossible because strain relaxation takes place by the introduction of dislocations instead of three-dimensional island formation [18 20].
By combining X-ray reciprocal space mapping, transmission electron microscopy and atomic force microscopy, we clearly show that improvement of the surface morphology is obtained by controlling the introduction of dislocations, and especially β dislocations (aligned in the [1 1 0] direction).
This additional tilt, probably due to the introduction of dislocations with a preferential Burgers vector, produced a superficial step density increase and, therefore, strain relief occurred by twins in preference to MDs.
The yield strength of the FSWed 0Al and 1.5Al steels improved due to both grain boundary strengthening by grain refinement and dislocation hardening by the introduction of dislocations with an increase in the welding speed.
Their SHR with three stages and without the yield drop increased due to the active mechanical twinning and the introduction of dislocations during the FSW when the welding speed was increased.
Regardless of the specimens, the slight increase in the SFE, which was attributed to both the shear strain energy caused by the introduction of dislocations and the excess free energy by the grain refinement during the FSW, leads to an increase in the critical twinning stress (σtw).
Among the observed microstructural features, the introduction of complex dislocation arrays due to plastic deformation appears to be critical for shape memory development, since they can arrest the backward movement of Shockley partial dislocations over the original path.
