"internal voltage" is a correct and usable phrase in written English.
You may use it to refer to the voltage generated by components within a device, such as when referring to the circuit board of a computer. For example, "We observed a decrease in the internal voltage of the circuit board as temperature increased."
With the conventional VSynC, the positive-sequence internal voltage is completely synchronized with the positive-sequence network voltage, however there is very little negative-sequence internal voltage produced.
M i and E gi are the ith machine inertia and internal voltage, respectively.
The internal voltage of VSC is also decomposed into positive- and negative-sequence components.
Then, internal voltage distribution is determined by applying a lumped-parameter model approximation.
Without rapid closed control loop of the current, the internal voltage is directly generated by the PWM (direct-VSynC).
The internal voltage or gap voltage, Vg(t), rises with the external voltage until the primary discharge occurs.
The discharging of the internal emf voltage (V emf) can influence the device characteristics including ON-resistance (R ON).
In the model, they assumed that in the ON-state with atom point contact, the ON-resistance is restricted in the contact regime, being R ON = R c = nG 0 − 1, and assumed that R ON is directly dependent on the internal emf voltage ((V emf)).
While both positive- and negative-sequence internal voltages are synchronized with grid voltage by using the improved VSynC.
The trajectory of the network voltages and the VSC's internal voltages is depicted in αβ-stationary reference frame as Fig. 11a and b, respectively.
As a result, the maximum internal voltages, the layer-to-layer voltages and the turn-to-turn voltages are better estimated.
