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Ion implantation induced intermixing is a technique that is compatible with planar processing and can be used for band gap tuning, essential for device integration.
The precursor intermixing is a critical issue in spatial ALD system design, and it is highly dependent on the flow and material distributions.
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For sample A, small modifications of the interfaces (e.g., L d = 1.5 nm) do not change the optical transition energies significantly and the agreement with the experiment remains good see Table 1 (i.e., the correction due to the inclusion of intermixing is of the order of a few millielectronvolts).
(A ) Partner intermixing is insensitive to diffusion constants.
If cooperative intermixing is suspected, then examining whether the intermixing index increases linearly as a function of community height will be informative to exclude transient increases.
DOI: http://dx.doi.org/10.7554/eLife.00230.020 10.7554/eLiFigure3 figureigure 3—figure supplement 1. Intermixing is observed in obligatory cooperative communities over a wide range of conditions.
A kinetic criterion for the atomic intermixing is whether the increased kinetic energy of the deposited atom near the surface is larger than the energy barrier to atomic intermixing on the surface.
The In/Ga intermixing is greatly suppressed when the InAs QDs is capped by GaAsBi.
Furthermore, the uniformity of the GaAs IF In/Ga intermixing is enhanced.
(D ) Cooperative intermixing is insensitive to initial ratios.
(B ) Partner intermixing is insensitive to the kinetics of interactions.
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