Sentence examples for interfacial reflection from inspiring English sources
A general statistical model of characterisation of the radiative properties of homogenised phases has been developed for a porous medium with a semi transparent absorbing phase a and a transparent one b, characterised by general interfacial reflection and transmission laws.
The interfacial material consisting of TiO2/SiO2/TiO2 trilayer has been used for the first time and hold about 15% averaged reflection comparable to As2Se3 in the NIR range of 1200 1800 nm, which means that the trilayer is of high crystalline quality with gradually varied refractive index and acting as the role of light-trapping to reduce interfacial reflection.
For non Beerian homogenised phases, it is based on successive sets of radiative statistical functions: extinction cumulative distribution functions, scattering cumulative probabilities and general phase functions ab initio determined by a Monte Carlo approach, only from morphological data and interfacial reflection and transmission laws in the last case.
Impedances have been matched across the solid shell interface to prevent interfacial reflections of the longitudinal strain wave.
Thinner connections of scattering segments (i.e. lower effective stiffness) generally lead to (i) wider bandgap due to enhanced interfacial reflections, and (ii) lower bandgap frequency range due to lower wave speed.
Approaches to probing interfacial structures with X-ray reflection and neutron reflection are described along with some of the advances in sample environment design that have facilitated these explorations.
The absorption efficiency of the SiC NW/C hybrid foams is discussed in the text in view of the highly absorbing layered morphology of the developed material, of interfacial polarization and multiple reflections effects and of polarization relaxation effects.
A linear relationship between DR and ln λ was found, and the slope was interpreted as a reflection of the interfacial interactions in the heterogeneous blends.
Physical methods such as electro-resistivity, light transmission, and reflection techniques can be used, but usually the effective interfacial area is determined by mass transfer measurements in the presence of a fast chemical reaction as proposed by Joosten and Danckwerts (1973).
An IFFT image formed by only including the (111) plane reflections revealed only two dislocations located at the interfacial region of the QD and GaAs (Figure 3C).
The interfacial conditions are straightforward to formulate, easy to implement, and effective for reflection reduction in crystalline solids with strong nonlinearity.
