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Contrary to expectation that the oxidation of GaAs at the Au/GaAs interface proceeds by the generated h+, no chemical dissolution in the area of contact between the Au catalyst and the underlying GaAs substrate was observed in the case of Fig. 4.
These results indicate that chemical etching occurred one-to-one only at the Ag/silicon interface and proceeded anisotropically perpendicular to the substrate, i.e., in the <100> direction as shown in the inset of Figure 5a.
This question was addressed by Dieterich and Kilgore (1994 19966), who showed that as the interface aging proceeded, the contact area increased both by forming new contacts and by merging existing contacts.
These results indicate that conventional metal-assisted chemical etching, which is shown schematically in Fig. 1c, occurred only at the Au/GaAs interface and proceeded anisotropically perpendicular to the substrate, i.e., in the <100> direction.
The individual subunits are designated A through E, starting with the subunit at the open interface and proceeding counter-clockwise around the clamp loader in the standard view.
If there is no surfactant at the air water interface, this thinning proceeds until there is complete dewetting at one or more points, accompanied by a corresponding thickening elsewhere.
Ellipsometric data are consistent with a model in which the conversion of the anodic film begins at the film-electrolyte interface and proceeds inward toward the metal.
Furthermore, development of graphical interface for visualization definition in TEDViT has proceeded to reducing the cost (Tezuka et al., 2016).
DOI: http://dx.doi.org/10.7554/eLife.07410.016 To further probe the architectural model of higher-order SAS-5 assemblies, we proceeded to disrupt each oligomerization interface by engineering charged residues in place of core hydrophobic amino acids.
