Today, there is growing interest for realization of new technologies utilizing spin degree of freedom of electrons in semiconductor devices [1].
These results support previous assertions that it is possible to obtain a zero valence band offset in the InAs/GaAsSb quantum dot system, making it a system of interest for realization of a novel photovoltaic structure, the intermediate band solar cell.
Behind the interest is the realization that giant Japanese trade surpluses are as passé as disco music.
They are of great interest for the realization of low threshold laser nanosources and for a strong interaction between the cavity and sources.
The Energy harvesting (EH) technologies are receiving significant interest due to realization of 'zero-power' wireless sensors and Internet-of-Things (IoT).
The present results constitute a novel strategy in the processing and molecular integration of graphene that could be extended to other (bio molecules of interest towards the realization of functional materials for different applications.
Light-emitting diodes [LEDs] have attracted much scientific and commercial interest since the realization of a practical LED device with emission frequencies in the visible region of the electromagnetic spectrum [1].
