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A 3D IC is formed by vertical interconnection of multiple substrates containing active devices which offer reduced die footprint and interconnect length.
The interconnect length varies from 0.01 to 100 μm.
The interconnect length of cascading logic gates has a profound effect on the signal propagation delay.
The copper interconnect length up to 5 μm for tnode = 45 nm and tsub = 500 nm.
No distinction with the substrate thickness is visible beyond 1-μm interconnect length.
Furthermore, the maximum interconnect length is evaluated with a minimum swing potential value in interconnect design.
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Each of these options has its merits and penalties with respect to metrics of interest such as delay, energy per bit, bandwidth, pitch, form factor and multi-chip dimension for different interconnect lengths.
The lower length interconnect enhances the cutoff frequency.
Smaller length interconnects result in higher cutoff frequency.
It is shown that the optimized low swing CMDR technique is efficient for global interconnects of the length equal or longer than 5 mm, and the improved buffer insertion technique, NEBI, is a perfect choice for the short global interconnects.
Analysis of the void behavior and its influence on the resistance gives the circuit designer a tool for choosing the proper parameters of an interconnect (width-to-length ratio, properties of the line material, conductivity of the underlayer, etc.).
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