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The latest miniaturization of electronic devices is approaching atomic dimensions, interconnect bottlenecks are limiting circuit speeds, new materials are being introduced into microelectronics manufactured at an unprecedented rate, and alternative technologies to mainstream CMOS are being considered.
The feature sizes of the latest generations of electronic devices are approaching atomic dimensions, interconnect bottlenecks are limiting circuit speeds, new materials are being introduced into microelectronics manufacture at an unprecedented rate, and alternative technologies to mainstream CMOS are being considered.
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Optical interconnects provide a promising solution to this on-chip interconnect bottleneck.
The central issue of OIIC concerns the area optical interconnect approach to the interconnect bottleneck encountered in advanced VLSI-CMOS designs.
On-chip networks are an important design paradigm to appease the interconnect bottleneck, where information is communicated among circuits within packets in an Internet-like fashion.
A part of this area focuses on the realization of integrated optoelectronic devices (such as light planar waveguide amplifier, light-emitting diodes, lasers,..) to overcome the interconnect bottleneck for Si-based integrated circuits.
One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems1.
Core-based SOCs based on 3D IC technology are being advocated as a means to continue technology scaling and overcome interconnect-related bottlenecks.
Interconnect has become a primary bottleneck in the integrated circuit design process.
The goal is to identify certain limiting factors and bottlenecks with these interconnects.
With high capacity and low power consumption, the optical interconnect provides a promising solution to address the communication bottlenecks in cloud computing data centers.
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