Sentence examples for intense gap from inspiring English sources

Exact(1)

Auxiliary increase of centrifugal force in spin coating rate will create an intense gap between the nanorod bundles which is identical to the scattered islands.

Similar(57)

As the number of layers (or stacks) increase, a narrower and more intense band gap can be observed.

These analyses revealed that GAP-43 positive axonal varicosities were remarkably sparse especially in the Cln1-/ neurons; although intense membrane associated GAP-43 immunoreactivity was evident.

Although the variety of anodizing regimes allows one to design the periodic modulation of the porosity of oxide film, the information about the optimal number of layers needed for the appearance of intense photonic band gaps is absent.

We had a pretty intense chat about generation gaps, how you can't choose your family and the emotional weight of photographing your grandma's corpse.

As the battle over the state budget and the looming multibillion-dollar gap becomes more intense, Mayor Michael R. Bloomberg has stepped up his call for the Legislature to pass a penny-per-ounce tax on soda to stave off major service cuts to education and health care.

Lithium ion capacitors (LICs) are considered to be high-performance energy storage devices that have stimulated intense attention to bridge the gap between lithium ion battery and supercapacitor.

In the former case charges distributions induce in the gap region an intense hot spot while in the latter one a "zero-field spot" occurs in a plasmonic mode which can be referred to a non-zero dipolar momentum.

Since surface plasmons localized near the tip-substrate gap region generate an intense electromagnetic field, effects of the interaction between the intense electromagnetic field and the transition moments of the molecular excitations and de-excitations are expected to occur [7 11].

Seedlings and saplings are mainly found in disturbed and unstable sites with intense light such as forest gaps (He et al. 2015).

At the end of laser, the electron occupation is broadly distributed in the energy range of 2.4 42.4 eV, which means a high excitation rate in the narrow-gap semiconductor under intense laser field.

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