We present a new integrated circuit, based on multi-CDS, which can be used also for the detection of random events in absence of synchronism signal.
A general trend of increment in the level of integration can be observed on the graph, and we have realized the first demonstration of large-scale integrated circuits based on hybrid integration of 502 CNT transistors and 502 IGZO transistors.
Toward printed integrated circuits based on unipolar or ambipolar polymer semiconductors.
Yang, Y., Ding, L., Han, J., Zhang, Z. & Peng, L. High-performance complementary transistors and medium-scale integrated circuits based on carbon nanotube thin films.
Cryoelectronic integrated circuits based on Rapid Single Flux Quantum (RSFQ) technology are promising candidates for realizing systems exhibiting very high performance in combination with very low-power consumption.
By plasma treatment of PLLA with subsequent deposition of metal nanolayer and consequent thermal treatment materials useful in tissue engineering can be constructed, for example cell carriers or manufacture of integrated circuits based on biopolymers can be enhanced.
Organic integrated circuits based on organic thin film transistors (OTFT) are gaining more and more attention nowadays, the availability of accurate spice-like device model for OTFTs suitable for Electronic design automation (EDA) applications is particularly attractive.
On the other hand, graphene prepared by chemical vapor deposition (CVD) and epitaxial graphene can be used for potential device applications because the sizes of these systems should allow realization of wafer-scale integrated circuits based on graphene [7].
So, the developing new technique for achieving true 3D-integrated circuits based on the conventional complementary semiconductor transistor technology is critical and remains a challenge.
We have been developing a serializer application-specific integrated circuit (ASIC) based on a commercial 0.25-μm silicon-on-sapphire (SOS) CMOS technology for the ATLAS liquid argon calorimeter front-end electronics upgrade.
Features detailed processing information for the latest technology node of integrated circuit design, based on FinFETs.
