2D finite element models with cohesive elements inserted at the interfaces of woven layers were used to evaluate the delamination initiation and propagation in different woven patterns of simple AP-PLY composite beams.
Ultra-thin InAs layers with a thickness of 1 ML have been inserted at the interfaces of GaAs/AlGaAs QWs to tune the asymmetry of the QWs.
To improve the interfacial toughness of the sandwich beam, short aramid fiber of different lengths and densities were inserted at the interface during the sandwich fabrication process.
The effect of finite deformations and of interface fracture was included in the simulations, the latter through a bidimensional and quadratic interface element inserted at the fiber/matrix interfaces.
Sample C and D have the same structure with that of sample A and B, respectively, except that an ultra-thin InAs layer with a thickness of 1 ML is inserted at one of the interfaces of each GaAs/Al 0.3 Ga 0.7As QWs, i.e., forming Al 0.3 Ga 0.7As/InAs/GaAs/Al 0.3 Ga 0.7As structures.
The interface bonding energy (vector) of TiAl3/Al decreased when Si was inserted at the Al position of the TiAl3 crystal structure, increasing the stability of the TiAl3/α-Al interface and enhancing nucleation.
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In order to obtain lattice-matched structures, a thin layer of InSb was inserted at the GaSb on InAs interface.
By inserting a CsOx film at the interface of the TiOx/active layer, the power conversion efficiency up to 5.65% and 3.76% has been achieved in inverted PSCs with P3HT ICBA and inverted PSCs with P3HT PCBM, respectively, under 100-mW cm−2 AM 1.5 G simulated solar illumination, suggesting that the TiOx/CsOx is superior than the TiOx and the CsOx.
Such a model is also inconsistent with the entrapment of sister DNAs within chemically circularized rings using bi-functional thiol-specific reagents to cross-link cysteine pairs inserted at the ring's three interfaces [10].
