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Above the injection level, more particles are brought upward and the circulation of solids is promoted.
Figure 6 Injection level dependent minority carrier lifetime for the stacked passivation film.
Fig. 5 Effective minority carrier lifetimes at an injection level of 1014 cm−3.
In some western countries this injection level is higher as compare of Indian scenario.
The τ eff of the as-deposited samples depends very strongly on injection level, decreasing by approximately one order of magnitude as the injection level is decreased from 3 × 1014 to 1013 cm−3.
It is constant for low-level carrier densities, and it increases for high injection level [29 31].
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Figure 1b, c shows the injection level-dependent effective minority carrier lifetime of the samples without and with O2 plasma pretreatment.
Injection level-dependent effective minority carrier lifetime of the (b) SD and (c) SO samples {S}_{max}=frac{W}{2{tau}_{eff}}, (1 where W (=250 μm) is the thickness of the silicon substrate.
This dependence in injection levels is much weaker for the annealed samples.
The models describe the cathode one dimensionally and are valid also at high injection levels.
Meanwhile, the saturation behavior of the maximum output power was observed at similar current injection levels for both samples.
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