Sentence examples for injected gate from inspiring English sources

Simulations and experimental results showed that a larger injected gate current density is possible for the memory devices with VARIOT structure tunnel barrier compared to memories with only a single-layered tunnel oxide [18, 19].

During a three-dimensional (3D) kinematic field measurement using a system of five panned, tilted and zoomed video cameras (50 Hz, time synchronised by a gen-lock signal) a top world-class racer performed a total of 12 runs on an injected 15 gate course.

However, it deteriorates the device reliability greatly because the oxide quality was deteriorated and the hot holes generated in the surface high-field region could be easily injected into the gate oxide and hence caused larger subthreshold conduction and drain breakdown at lower voltage.

One source is the surface states associated with electrons injected from the gate.

A 200-ms electric pulse with front portion having higher amplitude and back portion having lower amplitude is injected to the gate of the synaptic FET with zero time delay after the presynaptic spike.

As the energy distribution of conduction electrons in the source follows the Fermi Dirac distribution, electrons injected by increasing gate voltage (V G) also follow the Fermi Dirac distribution which limits minimal SS around 60 mV/dec at room temperature.

In contrast to prior electrically gated THz spectroscopy experiments performed on graphene29,30,31,32 we employ a low-mobility, high carrier concentration gate-electrode material, in this case p+ boron-doped, nano-crystalline silicon, to ensure a negligible THz response from free carriers injected into the gate-electrode.

The faulty circuit is a copy of the fault-free circuit, with faults (s-a-0 or s-a-1 variables) injected at the gates to be affected by faults.

Electrons were in fact being injected into the floating gate of the transistor.

When the applied VDS,stress was between Vc 1 and Vc 2, the SCLC effect (Figure 5b) caused localized charges to occur at the surface of the epitaxial layers, thereby limiting the amount of injected carriers; consequently, the gate leakage current did not increase markedly when the VDS was increased.

The charge is injected into or removed from the floating gate and the floating gate remains in that state, even after power is removed, which means that Flash memory is nonvolatile.