Sentence examples for inert ambient from inspiring English sources

The absence of carbon precipitation can be explained by thermally activated carbon diffusion from surface inside Al2O3 particles during annealing in inert ambient.

Procedure of surface carbonization was similar to that used for carbonization of fumed silica in [1], i.e., successive procedure of chemical grafting of phenylmethoxy groups to the surface of nanoparticles followed by thermal calcinations in chemically inert ambient.

The effect of annealing temperature in inert ambient on structure and photoluminescence of modified alumina powder was studied by IR spectroscopy as well as photoluminescence spectroscopy with ultraviolet and X-ray excitation.

An alternative method for Ge NCs production [10] consists of the following steps: low pressure chemical vapor deposition of thin Si-Ge layer, thermal wet or dry oxidation, and thermal treatment in an inert ambient (reduction).

It is shown that anodic oxidation under UV illumination followed by rapid photothermal processing (450 °C, 15 s) in the inert ambient yields the best optimization of the SiO2 thin films properties.

Recently, we have obtained preliminary results which demonstrate a strong enhancement of the red PL band of the exposed nc-Si/SiO2 structures after annealing even in the inert ambient; however, a special temperature regime of the thermal treatment is necessary.

In this work, we present a nanometer resolution structural characterization of epitaxial graphene (EG) layers grown on 4H-SiC (0001) 8° off-axis, by annealing in inert gas ambient (Ar) in a wide temperature range (T gr from 1600 to 2000°C).

It has been shown that the rate of Si evaporation can be strongly reduced by performing the annealing in inert gas ambient at atmospheric pressure instead than in vacuum [8, 9].

Few-layers of graphene grown on 4H-SiC (0001) 8° off-axis, by annealing in inert gas ambient (Ar) in a wide temperature range (from 1600 to 2000°C) have been structurally characterized by atomic force microscopy and HR-XTEM.

I V characteristics of the junction were studied at different temperatures in inert and reducing ambient (N2 and N2 + CH4) with turn on voltage of around 0.2 V.

In this work, we present a structural characterization of EG growth on the Si face of 8° off-axis 4H-SiC [11] by annealing in inert gas (Ar) ambient in a wide range of temperatures (T gr from 1600 to 2000°C).