Sentence examples for induced faults from inspiring English sources

Magnetic tunnel junction (MTJ) as the basic element of such hybrid technology is inherently robust against radiation induced faults.

RAP assumes that physically induced faults at the technology or CMOS device layer will eventually manifest themselves as a single or multiple bit flip(s).

Radiation induced faults in digital systems have started gathering major attention in recent years due to increasing reliability concern for future technologies.

In this paper, we investigated the influences of faults at different stages of evolution on reservoir management and induced fault slippage.

The initial modelling results show that the likelihood of injection induced fault reactivation is exceedingly small, due to the very small pressure increases associated with injection (∼ 0.05 MPa after about 100 days of injection during the Stage 2C experiment).

In the latter attack, we assume that we can induce faults on a single nibble of intermediate states.

To retrieve K 31, we require also to induce faults on the nibbles of intermediate state at the beginning of the 28th round's S-box layer.

Ground pressure consists of gravity stress and tectonic stress: sigma_{text{s1}} = gamma H + lambda gamma H = (1 + lambda )gamma H (6). Abutment stress is expressed as: sigma_{text{s2}} = (k - 1 gamma H (7). In particular, when mining approaches to faults, the rockburst induced by fault slipping takes a dominant position.

Fault analyses have found that rather large fluctuations within the MHD generator are induced by faults of the inverter and power transmission line, but control of the inverters can recover the MHD generation system to normal operation within 0.15 s.

Pure GNSS approaches are evaluated by combining true measurement data collected in port operation scenario with artificially induced measurement faults, while for the hybrid navigation system the measurement data in an open sea scenario with native GNSS measurement faults have been employed.

The only few works performed on nonpolar ((11-20) and (10-10) planes) GaN epitaxial layers, however, were largely affected by the substrate or the growth induced stacking faults [6 16].