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Szot, K., Speier, W., Bihlmayer, G. & Waser, R. Switching the electrical resistance of individual dislocations in single-crystalline SrTiO3.
We show a new way to fabricate well-defined individual dislocations in SiGe.
On the one hand, individual dislocations can be probed in detail with transmission electron microscopy.
Dislocation density and Burgers vector of individual dislocations in EHL and BL lubricant regimes were determined.
Starting from the equation of motion of individual dislocations a continuum description is derived.
The motion of individual dislocations is assumed to be driven by the resolved shear stress and follows an Arrhenius law.
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Finally, contact pads were added to the stripes enabling the electrical characterization of individual dislocation.
These findings are explained by individual dislocation sources which govern the plastic deformation.
Subsequent strain relaxation caused by high temperature treatments leads to the formation of individual dislocation along the mesa stripes.
In addition, a sensitivity analysis was performed to establish the relative contribution of individual dislocation parameters in predicting the flow stress.
Load displacement curves produced using nanoindentation show evidence of discretized, Burgers vector length displacement steps, or excursions, which can be associated with individual dislocation emission events.
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