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The resistivity annealing behavior was different in low irradiation temperature samples, Tirr < ∼400 °C and high irradiation temperature samples Tirr > ∼400 °C, which indicated defect structures established during irradiation were different in these two temperature regimes.
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The studies of Si/Ge/Si(100) structures indicated defect-free Ge nanopaticles and Si layers for the initial stage of heteroepitaxy (five monolayers of Ge) in pulsed ion beam action growth mode at 350 °C.
These errors indicated defects in the Grasshopper program or limb model.
Recent developments, both theoretical and experimental, have indicated defects in the models used up until recently.
Our previous microarray of Friedreich's mouse model DRGs indicated defects in thioredoxin reductase, thiol-antioxidant transcripts and a deficiency in Nrf2 activity in FXN knockdown cells (12).
The dashed black line indicates the CNP, and solid circles indicate defect states.
The blue solids of (b) and dashed lines of (b) and (c) indicate defect and capacitor boundary, respectively.
Arrhenius representations of bulk conductivity data show a gradual slope change, indicating defect interactions on cooling to intermediate and relatively low temperatures.
They looked like bright patches (indicating tightly packed cells) with irregular shape (indicating defect arrangement of cells inside the placode).
If an iron bar is inserted into the secondary coil, sharp changes in the secondary current can indicate defects in the bar.
Temperature-dependent measurements indicate defect-mediated tunneling through these dielectrics.
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