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Increasing DOPE often gains high activity for the HCII structure promoted by DOPE.
For polysulfone fibres, permeability decreased with increasing dope concentration.
This suggests that the outer skin layer of the membranes becomes apparently thicker and denser with increasing dope extrusion rate.
Both permeability and selectivity increased with increasing dope extrusion rate, possibly due to enhanced orientation of the membrane skin.
Once the separation performance reaches maximum (critical point), the rejection decreases with increasing dope extrusion rate, observed possibly due to formation of less tighten outer skin structure at high dope extrusion rate.
The selectivity of the solid polymer (the maximum selectivity achievable by any membrane if coating is highly effective or if no surface pores are present) was found to increase with increasing dope extrusion rate.
Similar(54)
As can be seen, the crystallite size increased for undoped ZnO and doped films with increasing doping level up to 2 wt.% Co and 3 wt.% In.
The aspect ratio of the NWs grown on Ga-doped ZnO layers decreases with increasing doping concentration, whereas it decreases with increasing temperature.
Based on the band tailing effect, the band gap of a heavily doped semiconductor will shrink with the increasing doping levels.
Increasing doping from 0.5%to1.0%0% increased photocatalytic degradation by ∼17% under visible irradiation.
The increasing doping concentration of the resistor will decrease the process window significantly.
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