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The manganese current efficiency decreased with increasing deposition time as the deposit became rougher and the real current density deviated from its ideal value.
Interestingly, the atomic ratio of In/O in the deposited film decreases by degrees with increasing deposition temperature.
In the case of the deposit Ni content, it slightly increased with increasing deposition temperature.
The ability to deposit thin films onto glass at ever increasing deposition speeds and greater precision relies on a complex interplay of technological components.
The capacitances for the PG/NF electrodes deposited under each potential firstly increased with the increasing deposition times but ultimately decreased.
With increasing deposition time, the gold layer becomes electrically conductive.
The relative content of silicon increased with increasing deposition temperature.
The mechanical property improved with increasing deposition time.
The growth rate of Al2O3 films decreases with increasing deposition temperature.
Grain sizes (extracted from XRD data) increased following the increasing deposition temperatures.
The (200) peak increased with increasing deposition potential during the on-time pulse.
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