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Increase in composition of AMPS causes suppression of concentration fluctuations in the long wavelength.
With an increase in composition, both the systems showed increase in demixing rate (decrease in demixing time).
In general the microstructural instability measured as the size of the reaction zone increased with the increase in composition difference between the two initial alloys and in atomic mobility difference between the diffusing species.
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Reflection spectrum shows that the optical absorption of the In x Al1-xN films redshifts with an increase in the In composition.
The reflection spectra shows that the optical absorption of the InAlN films redshifts with an increase in the In composition x. Figure 6 Reflection spectra of In x Al 1- x N films at various in compositions.
The critical thickness at different slip system with increasing In composition is plotted in Fig. 5.
The surface roughness of InAlN films increased with the increase of In composition.
Due to inverse relationship a slow increase in In composition in step-graded structure leads to larger h c at each interface.
In heteroepitaxy growth of InGaN using step-graded interlayer, due to the step increase of In composition in the epitaxial layers, a multiple step inclination of TDs at each interface will occur.
From the figure, the critical thicknesses have been found to be 12.4, 13.9, and 3.3 nm in (11 22), (1 101), and (0001) slip, respectively, for 10%% increase of In composition.
Figures 5 and 6 and S4 S6 indicated that as the temperature increased, the TE composition increased, until at about 140 °C, after which the increase in TE composition became marginal.
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