In the application of light-curable adhesive, we employed an inverted optical microscope (IX 71, Olympus) to ensure uniformity in the size of droplets (approximately 5 μm) on the scale of the base length (approximately 4.5 μm) of the pyramidal AFM tip.
The latest twist in the application of light sheet microscopy, Bessel beam-based imaging especially in two-photon illumination, promises another significant advance in this field 14.
In each session, participants received a standardized five-minute massage on each foot (10-min in total), involving the application of light pressure with long, gliding, rhythmical strokes of the entire foot and ankle, and toe and ankle rotation, flexion and extension [ 16- 19].
On the other hand, the shape of conductance distribution displays a crossover phenomena in the intermediate disorder strength; the application of light dramatically changes the distribution from log-normal to normal distributions.
This work explored excited-state intramolecular proton transfer (ESIPT) in 2-(2′-hydroxyphenyl) benzothiazole (HBT) for the application of light-emitting devices.
The application of light results in the production of free oxygen radicals (Type I PDT, caused through electron abstraction or transfer from a substrate molecule) and singlet oxygen (Type II PDT).
The application of light harvesting in fluorescent sensor films with a short optical path-length (<1 μm) requires antenna dyes to meet the following criteria: (a) high molar absorption coefficient (ε > 30 000 L mol−1 cm−1); (b) good solubility in the host polymer (2% w/w) to absorb as much excitation light as possible.
In the applications of light emitting sources it has recently been proposed that the PPD device can be used to calibrate a VUV spectrometer-detector system [10].
The progress in the application of the "light method" is underlined, up to the development of a novel technique, which relies on the use of a yielding support composed of top head steel sets with sliding joints and special deformable elements inserted in the primary lining.
Among them, due to the high thermal conductivity, wide direct bandgap, and chemical stability, III-V family nitride-based semiconductors, including aluminum nitride [AlN], gallium nitride [GaN], and indium nitride [InN], and their alloys have attracted lots of studies in the applications on light-emitting diodes and laser diodes.
