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Initially, all memory devices were in HRS.
The device will be in HRS.
Hence, static walk is now not very common in HRs.
The device will be in HRS (Figure 5d).
A degeneration of the initial resistance and the resistance in HRS occurs for the radiated samples.
Initially, the memory device was in HRS or initial resistance state (IRS).
We categorized participants in HRS according to net worth quintiles (lowest net worth quintile <$24,000).
Thus, the carrier transportation in ZnO is with the aid of tunneling effect in HRS.
No significant degradation of resistance in HRS and LRS was observed.
In HRS, the resistance value decreases as the temperature increase to 353 K.
The hopping conduction can be expressed as [19]: Figure 7 Temperature dependence of current density-electric field characteristics both in HRS and LRS. Figure 8 Hopping conduction and trap energy level in HRS.
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