Exact(2)
Extraction with the use of a porous membrane which forms an interphase between two bulk phases and provides the physical surface for mass transfer is, in a number of applications, more efficient than that carried out in conventional devices.
Through the repulsive interactions between the hydrophilic PCBM and the hydrophobic PVDF, much more uniform phase separation with good P3HT crystallinity is formed within the active layer, resulting enhanced light harvesting and improved photovoltaic performance in conventional devices.
Similar(58)
i j Droplet splitting in conventional device with scheme I and II respectively.
As charge-transporting layers, we utilise the hole-transporting polymer poly (2, 3-dihydrothieno-1, 4-dioxin -poly (styrenesulfonate) (PEDOT:PSS) in conventional device architectures, and zinc oxide (ZnO) electron-transport in inverted devices.
The 100-nm ZnO NWs for deep UV magneto-optic device application with the ultimate goal of manipulating a single electron spin and polarization reflected intensity rather than the charge and source as in more conventional devices.
However, in contrast to conventional devices, there are no reliable design methods available for PPHE in the literature, which hinders expansion of PPHE application.
Whether this incidence is higher or lower, in comparison with conventional devices, has to be analyzed over a longer period or in a randomized study.
The performance of the developed device was compared to that of conventional foil strain gauges and it was demonstrated that, in contrast to the conventional devices, the omnidirectional strain sensor developed here shows almost uniform sensitivity at various installation angles.
Normally, in the conventional device architecture, a poly (3,4-ethylenedioxythiophene):poly (styrenesulfonate) (PEDOT PSS) layer is employed as an anode buffer layer [7 9].
Moreover, a solar module (4 × 4 cm2) with an SAH TiO2 layer as an electron transport layer using the SAH method exhibited a PCE of 14.01% in a conventional device configuration at low temperatures.
It is suggested that in the conventional device architecture, it is better to reduce thermoelectric material consumption rather than to increase zT for higher conversion efficiency, i.e., higher power output with given heat input for lower costs, in certain cases.
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