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Stresses are found in this application to unload to non-critical values after reaching critical levels earlier in a forming process, which suggests that a full integration of the stress-based forming limit criterion with FE simulation is required to detect critical states that may temporarily occur during the forming process.
It was found that post annealing in a forming gas ambient (4% H2+96% Ar) can reduce the nano- and micro-bismuth oxide particles in screen-printed n-type BiTeSe films, resulting in a bismuth rich condition and creation of bismuth antisite defects.
A review of computational modelling and simulation of pultrusion processes is presented including such aspects as: resin flow and pressure distribution in a forming die; impregnation of reinforcing fibers; heat transfer and resin reaction; pulling force, stresses and strains development; methods for numerical optimization of the process.
Upon isochronal annealing in a forming gas (90 vol.% N2, 10 vol.% H2) between 400 and 650°C for 30 min, the hardness and lattice parameter of crystal planes parallel to the substrate decreased, indicating that the hardness enhancement is due to a high biaxial compressive stress in the coatings.
After the deposition, the SiNW arrays were annealed in a forming gas at 400°C.
Thermal annealing treatment was conducted in a forming gas (4% H2 in N2) at 300, 400, and 500 °C.
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