Sentence examples for improved resistive from inspiring English sources

Improved resistive switching parameters such as set/reset voltages, low resistance state (LRS)/high resistance state (HRS), switching cycles, read endurance of > 105 times, and extrapolated 10 years data retention at 85°C of the IrOx-ND ReRAM device under positive formation polarity (PF) have been reported.

The model incorporates an improved Resistive Force Theory (RFT) model and a failure-based model.

The improved resistive switching (RS) characteristics of Pt/HfO2/Ti structured RRAM are demonstrated by engineering interface with argon (Ar) plasma irradiation.

We have designed, fabricated and tested an improved resistive amplification network for photomultiplier tubes (PMTs) resulting in high gain and fast rise time without the ringing usually associated with pulses with short decay times.

The bilayer structure devices have been confirmed with evidently improved resistive switching behaviors [24,25].

TiOxnanolayer formation at the Cu/TaOx interface improved resistive switching memory characteristics as described below.

Generally, inert metal electrodes[4] and various interfacial methods are used to improve resistive switching memory characteristics.

Electrical formation of an interfacial layer at the IrOx/high-κx interface is important to improve resistive switching memory characteristics.

The possible switching mechanism of trilayer structure of Al2O3/HfO2/Al2O3 has been proposed, and two interfacial layers between Al2O3/IL/HfO2/IL/Al2O3 play an important role in improving resistive switching characteristics.

Based on the bilayer-structure model, the oxygen exchange through the interface between two layers played an important role in improving resistive switching characteristics [19].

The findings of this study will not only improve resistive switching memory performance but also aid future design of nanoscale nonvolatile memory.