We show the impact of process parameters on the electrical performance of complementary Multiple-Gate Tunnel Field Effect Transistors (MuGTFETs), implemented in a Multiple-Gate Field Effect Transistors (MuGFETs) technology compatible with standard CMOS processing.
Currently, field-effect transistor (FET -based biosensors have been implemented in several portable sensors with the ultimate application in point-oFET -basedting (POCT).
All MOS transistors implemented in this architecture are biased in subthreshold region with a supply voltage of 0.6 V to reduce the power consumption.
The chapter illustrates a conceptual cross-section diagram of a typical NMOS transistor implemented in a LOCOS-type CMOS process.
In this study, we report results from a study of the electrical properties of p 6P nanofibers implemented in different field-effect transistor (FET) configurations.
The sensor has an array of 1024×384 pixels of size 15×15μm2, with the conventional design of three NMOS transistors implemented in the 20μm epi-layer.
Bipolar transistors implemented in silicon (Si) have for decades played an important role in high-performance electronic circuits.
The VLSI chip is implemented in 1.6 um CMOS technology with 68,000 transistors.
Sensory function of carbon nano-structures is generally implemented in the configuration of a field effect transistor (FET), with a prominent role played by the gate potential that controls the current through the device.
The modeling of all ADC building blocks along with their non-ideal effects have been implemented in MATLAB SIMULINK environment and the main transistor level circuits have been implemented in H-SPICE environment using 180-nm TSMC CMOS technology.
