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The aging laws and the parameter evolution equations with stress time are implemented in compact electrical aging model which allows us to simulate the impact of device failure mechanisms on the circuit in operating conditions.
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Relative incidence rates of device failure per 100 devices and per 1000 device days with 95% CIs will summarise the impact of each dressing, and test differences between groups.
Device safety was determined through evaluation of device failure and procedural complications.
Comparability of groups at baseline for risk of device failure will be assessed.
Other model inputs were the frequency of rod lengthening and the rate of device failure.
A very low percentage of the respondents (less than 10%) contact the manufacturer of the device in case of device failure.
It also maximises in-sewer storage according to different reward functions that also considers the potential impact of flow control device failure.
This study reports a multicenter EAG repair versus COS repair parallel cohort trial at 12 months and additional observations of specific device failure types and their impact on an aortic endograft design beyond that follow-up period.
Such debris generation is also believed to be a cause of earlier device failure.
In our SIPCS group, the mean device duration of 14 months compares favourable with this data, despite the relatively high failure rate of secondary device failure.
There could be implications related to long-term reliability of the device and other complications (e.g., skin overgrowth, extrusion of device, and device failure rate).
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CEO of Professional Science Editing for Scientists @ prosciediting.com