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(b) HRTEM image of the stack layers.

In brief, each image of the stack was filtered by a median filter of radius 2 and normalized by a median of the stack.

The tracking procedure consisted in determining the center of the bead by adjusting, on each image of the stack, the inverted-intensity of the image along four perpendicular radii of the bead to a Gaussian distribution in order to find the maximum intensity location along both x and y axes (Fig. S6).

On the midsagittal image of the stack, the centerline was drawn (see Figure 1).

Fig. 9 shows the average intensity image of the stack and the N and B images.

The subtraction algorithm consists of calculating the average intensity per pixel of a stack of images and subtracting pixel by pixel this image from the intensity of each image of the stack Ii x,y).

A cross-sectional HRTEM image of the stacked gate layer is exhibited in Figure 1b.

Figure 1 A schematic diagram of the flexible ZnO/Al-NPs memory TFT and the cross-sectional device structure ( inset ) (a), and a cross-sectional TEM image of the stacked gate layer (b).

Figure 7 High-resolution transmission electron microscope (HR-TEM) cross-sectional image of the stacked Si/3 nm-SiO 2 /8 nm-Al 2 O 3 /70 nm-SiN x :H film.

Cross-sectional images of the stacked films were carried out by transmission electron microscope (TEM).

Cross-sectional TEM images of the stacked contact area of different diodes is presented in Fig. 13b.