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On the top right, the result of applying the single scattering model (attenuation from the scene and airlight from the environmental illumination) is shown.
The energy band diagram of the forward-biased MLG/n-Si junction upon illumination is shown in Figure 3c.
The contour plot of surface nodal z-displacements in the optimal state for LCP feed illumination is shown in Fig. 9.
The results obtained from I-V curve measurements for N719-sensitized DSSCs under simulated AM 1.5 illumination is shown in Figure 7.
The iteration history of boresight directivity with RCP illumination is shown in Fig. 6, and it also took a less iteration number (87) using the BFGS update formula than that of the exact Hessian procedure (96).
The simulated electric-field energy distribution of an individual nanobump under SPP illumination is shown in Figure S1 (Supporting Information).
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Times after termination of the illumination are shown.
Outdoor scenes under sunlight illumination are shown in Fig. 4 g,h).
Typical transfer characteristics of the phototransistor in dark and under illumination are shown in Fig. 3d.
Typical transfer characteristics of the phototransistors based on 10 and 30 nm in dark and under illumination are shown in Supplementary Fig. 14.
The details of LSV curves with chopped illumination are shown in Fig. 5a.
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