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Times after termination of the illumination are shown.
Outdoor scenes under sunlight illumination are shown in Fig. 4 g,h).
Typical transfer characteristics of the phototransistor in dark and under illumination are shown in Fig. 3d.
Typical transfer characteristics of the phototransistors based on 10 and 30 nm in dark and under illumination are shown in Supplementary Fig. 14.
The details of LSV curves with chopped illumination are shown in Fig. 5a.
The I-V characteristics of single-junction GaInNAs SC, for AM1.5G real-sun illumination, are shown in Figure 1a.
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Macroscopic images at 180 min after skin stripping under light illumination are showed in Figure 5D and Figure 5H for the cases with noncoated and coated nanoparticles, respectively.
On the top right, the result of applying the single scattering model (attenuation from the scene and airlight from the environmental illumination) is shown.
The energy band diagram of the forward-biased MLG/n-Si junction upon illumination is shown in Figure 3c.
The contour plot of surface nodal z-displacements in the optimal state for LCP feed illumination is shown in Fig. 9.
The results obtained from I-V curve measurements for N719-sensitized DSSCs under simulated AM 1.5 illumination is shown in Figure 7.
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