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(ii) Sample according to (2). (iii) Sample according to (4) or (5).
The enlarged 2D band region of the type II sample is shown on Figure 2b.
Figure 3 C1 s XPS spectrum of the type II sample.
f Schematic cross-section of a deep-hole QD (type II sample).
There is yet another indication that the type II sample film has fewer graphene layers as compared to the type I sample - despite the greater number of defects in the type II sample (confirmed by the presence of D band in its spectrum), the I2D/IG ratio in the type II sample is still greater than in the type I sample.
The thus-visualized lamellar stacking structure has been found to be different depending on the preparation condition of the oriented form II sample.
Drawing of isotactic polybutene-1 sample near the melting point gives the oriented form II sample with the complicated higher-order structure or the stacked lamellar structure.
As a rule, micro-Raman spectra measured in various regions of the type I sample are more intense as compared to the type II sample spectra.
In the type II sample, the band has the maximum at 2,709 cm-1 with the gentler drop on the high-energy side.
Substantial changes in the silicon oxide film indicate the significant impact of the atmosphere taking place during the fabrication of the type II sample.
The additional type II sample was filled with d f = 0.57 nm resulting in uniform QDs with height of 7.6 nm [25].
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