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Forming-free I-V characteristics are observed.
Figure 4 Measured I-V characteristics of the fabricated switch.
This corresponds to the nonswitching I-V characteristics.
Inset plots I-V characteristics on linear scale.
Fig. 5 EQE spectra and I-V characteristics.
(a) Hundred I-V characteristics of the 0.4-μm devices.
(d) The I-V characteristics of the heterojunction device.
The I-V characteristics exhibited no hysteretic behavior.
Figure 9 I-V characteristics of solar cells.
Figure 4 Current voltage (I-V) characteristics and statistical distribution.
(b) I-V characteristics of the Ag/ZnO/Ag memristor.
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