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An on/off current ratio (I on/I off) of more than 105 has been achieved at V gs from −1 to 1 V with V ds of 0.2 V.
However, the high I on/I off of the TFET enables it to serve for the DRAM cell [15].
The magnitude of I off of rectangle-shaped bulk FinFETs is small, and 70° bulk FinFET has large I off.
The TFTs exhibit field-effect mobility and I on/I off of 35 cm2V−1 s−1 and 106, respectively (Fig. 4c, d).
In addition, proposed HG TFET has an I on/I off of 5.6 × 104 at V DD = 1 V which is comparable with other reported Si TFETs [8, 11, 12, 22].
The V T, μ, and I on/I off of ~0 V, 0.22 cm2/Vs, and ~104, respectively, were obtained in the device with SF PVA = 7 5 blend dielectrics.
Similar(51)
It shows clear n-type characteristics with an I on/I off ratio of approximately 105.
Though both HG and SiO2-only TFETs show low I off, I amb of both kinds of devices increases as V D increases.
Figure 4 Plots of I off versus I on and values of σI off, σI on, averaged I off, and averaged I on.
(d) The value of σI off, σI on, averaged I off, and averaged I on of trapezoidal FinFET device with different fin angles.
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