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For the C. elegans data with the logistic-distance Poisson model, we gridded μ hp and λ into 20 log10-spaced points between 0.2 and 2.0, and the ratescale hp parameter into 20 log10-spaced points between 2.0 and 20.0.
(Table 1) Similar results were obtained for the estimated real population of Menorca using the HP parameter; during May-October, this value was double that of the official figure, while for the remaining months of the year the official value and the HP estimate coincided.
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Population is smoothed using an univariate filter as long as only the migration component was sensitive to some of the imbalance indicators (HP smoothing parameter is 100).
The probability mass function (pmf) of the HP with parameters distribution is given by Pleft( X= kright)=frac{varGamma left(beta right)}{varGamma left( k+beta right)}frac{lambda^k}{varphi left(1,beta; lambda right)}, k=0,1,2,cdots; lambda >0 (1).
Static electrical characteristics J V) are collected by using an HP 4155B semiconductor parameter analyzer.
Memory characteristics were performed by using HP 4156C precision parameter analyzer system (Agilent Technologies, Inc., Santa Clara, CA, USA).
Resistive switching memory characteristics were measured by HP 4156C semiconductor parameter analyzer {Agilent Technologies, 5301 Stevens Creek Blvd, Santa Clara, CA, 95051, USA} for a device size of 0.6 × 0.6 μm2. Figure 1 The schematic view of the fabricated IrO x -ND based ReRAM devices.
The electrical measurements were performed using an HP 4155B semiconductor parameter analyzer, and the measurements were taken in both air (60%% relative humidity) and N2 environments at room temperature.
I V and C V measurements were conducted on an HP 4156 C semiconductor parameter analyzer and an HP 4284A LCR Precision Meter, respectively.
Staff (1964) studied a displaced Poisson distribution which is the HP distribution with the parameter β restricted to be a positive integer.
An HP-4156 C semiconductor parameter analyzer (Agilent Technologies Inc., Santa Clara, CA, USA) was then employed to measure current voltage (I-V) characteristics of the proposed ZnO nanorod MSM photodetector.
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