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Band-band hot hole.
The Poole-Frenkel current explains the hot hole trapping effect of the memory [14, 15].
The memory exhibits a notable hot hole program characteristic, and hence, a much higher erase speed is achieved.
This leads to a negative differential mobility (NDM) caused by real-space hot hole transfer, as we previously observed [1].
In addition to hot hole trapping, the Poole-Frenkel current of the hot electron program was also measured by applying a positive gate voltage.
Figure 6a shows the plot of current density versus the square root of the applied electrical field under various measuring temperatures at hot hole program operation.
Similar(44)
It maintains stable filtration rates in drilling hot holes.
Plasmonic photoexcitation of the hot holes can be supposed.
Hot holes injected far below EF will relax to EF in less than a femtosecond.
It was explained by citrate photooxidation by Ag plasmon "hot holes" [43].
Gate bias polarity serves to control whether hot electrons or hot holes are injected into the nitride storage layer.
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