If we differentiate and then assume that the root-mean-square value of a sinusoid is (1/sqrt {2}), then the horizontal rate of change can be written as: dmathbf{B}_{H}/dt = H_{0} frac{2 pi}{T} frac{1}{sqrt{2}} = H_{0} frac{sqrt{2} pi}{T} (2).
At a low oxygen flow rate of 5 sccm (O2/CF4 = 0.42), the ratio of vertical etch rate over horizontal etch rate (V/H) is low.
Therefore, increasing gas flow rate ratio (O2/CF4) could monotonically increase the ratio (V/H) of vertical etch rate over horizontal etch rate (Fig. 6a).
a The ratio of vertical etch rate over horizontal etch rate in a RIE system with fixed pressure of 100 mTorr and various power and gas flow rate ratio.
Therefore, for self-assembly of 3D nanostructures, the ratio of vertical etch rate over horizontal etch rate needs to be tuned to generate enough heat energy while only the surrounding panels are completely released.
The value of quantified grain coalescence, vertical etch rate, and horizontal etch rate of each sample was labeled as γ g (a.u ., V (nm min−1), and H (nm min−1), respectively.
The five ratings were generated on a horizontal analogue rating scale (0 represented "not at all"; 10 represented "very much").
The questionnaires contained visual analog scales incorporating a 100-mm horizontal line rating scale for each response.
Each item is provided of a 10‐cm horizontal numerical rating scale (NRS) anchored by adjectival descriptors 'none' and 'very severe'.
