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From our experimental results, the optimal amorphous/crystalline silicon interface is achieved for the highest growth temperature value.
At the highest growth temperature (1,400°C), the PL has the weakest intensity, and the PL peak has the longest wavelength of 678 nm.
The observations confirm that at low solidification rates the stable growth morphology in peritectic alloys cannot be selected by the highest growth temperature criterion.
In the case of Al-doped layers, for the highest growth temperature of T≈950∘C, we observed a well-oriented growth of vertically aligned NWs only for Al concentration of x=3.5 at.% with a diameter of about 80 nm and an aspect ratio of 30 (see Additional file 1: Figure S1 and Additional file 2: Figure S2).
As the yeast H. polymorpha belongs to the class of thermotolerant species with highest growth temperature around 50°C [ 23], the thermal stability of UOX was examined by incubating a cell-free extract for 10 min at 50°C.
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Furthermore, epitaxial growth of single-crystal ZnO thin films always needs a very high growth temperature.
Clearly, a higher growth temperature causes a larger domain size and higher nucleation density.
When using the same culture medium, the higher growth temperature resulted in the shorter latency time.
In the latter stage, the high growth temperature causes CH4self-decomposition.
They attribute the variation of nucleation modes to the kinetic limitation at high growth temperature.
Whereas, at a high growth temperature, strong Ge-Si intermixing can efficiently relax the misfit strain.
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