Sentence examples for highest absorption band from inspiring English sources

Reflectance data in the visible spectral range of highest absorption band served for direct analysis of MB degradation.

The presence of N-formylcarbazole moiety (dye V) provides the highest absorption band shift toward the longer wavelengths (about 20 nm).

The major high absorption band at ~490 nm in the visible region is observed corresponding to the singlet π→π* transition with 83 % MO contributions (Dokmaisrijan et al. 2013).

The V-cell design is simple and effective, easy to operate, suitable for applications in liquid samples with high absorption bands, willing to have broad application prospects.

If the diameters of the Ag nanodisks are varied for the absorption peaks in Fig. 2 to approach one another, a broad high-absorption band of monolayer graphene will be formed.

For the diameters of the Ag nanodisks to be increased gradually, this broad high-absorption band is red-shifted, as shown in Fig. 5b, c. Fig. 5 (a - d) Corresponding norma - dCorrespondingption spectra of monolayer graphene in the wavelength rabsorption450 to 800 nm with the diameterspectraur Ag nanofisks are varied, but the other paramonolayere the same as those in Figraphene

The highest energy absorption band increases in intensity while the lower energy band decreases.

The main reaction product is a chain structured C-A-S-H type gel regardless of slag/fly ash ratio and activator modulus, but a slightly higher main absorption band is shown in samples with high fly ash contents.

The FTIR spectrum of TiO2 °C00 °C) powder prepared from the film precursor contains a single broad high-intensive absorption band at 1000 370 cm−1 with a maximum at 550 cm−1 associated with the Ti O stretching vibrations.

On the contrary, the high-energy absorption band detected on the PLE spectra monitored on the band maxima of the GaN QD excitonic recombination overlaps with the one associated to the oxygen defect on the AlN layer, suggesting that the GaN QD emission band could also be fed by the defect level from AlN spacers, buffer or capping layer in the SL structures.

Exposure to light causes the intensity of this band to decrease, and a higher energy absorption band at λ=368 nm emerges and becomes more intense.