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Figures 5 and 6 show the plots of high-temperature resistivity ρ as a function of temperature T revealing good concurrence with VRH model [Eq. (32)].

Using parallel resistor extension to Bloch-Boltzmann theory, Hou et al. have pointed that high-temperature resistivity of single crystal Rb3C60 does not show signs of resistivity saturation up to 800 K [47].

The authors have also made a deep study of the chromium and yttrium elements, which affect the structure, the recrystallization temperature, the strength at room and high temperature, the resistivity and contact resistance, and have also compared the properties of the Cu Cr and Cu Cr Y alloy.

The second reason might be that the resistivity of the ITO substrate increases after annealing treatment at high temperature while the resistivity of the FTO substrate does not.

They do have the disadvantage of a high temperature coefficient of resistivity.

where ρo is the high temperature limit of resistivity (in Ω-m and T o is Mott's characteristic temperature (in kelvin) associated with the degree of localization of the electronic wave function.

At higher temperature, the resistivity at first glance does not appear to depend on the HfB2 content.

Under optimum deposition parameters, the sensing films with modulate electrical resistivity (<104 Ω cm) and high temperature coefficient of resistance (TCR) (>−3%/K) were obtained at room temperature.

While both field resistivity of 9 T and zero shows semiconductor characteristics at a high temperature region, it presents that resistivity is almost temperature-independent at a temperature more than 165 and 115 K, respectively.

Crystalline Si3N4 ceramics exhibit stability at high temperatures, high electrical resistivity and extreme hardness.

We have further used the adiabatic small polaron conduction (SPC) model for the analysis of resistivity behaviour for high temperature.