One is the slightly inhomogeneous electro-plated Ni particles and the other is the relatively weaker catalytic activity in the low-temperature marginal zone than that in the high-temperature center zone.
The vertical structure of the axisymmetrical mean equivalent potential temperature for T1109 showed a relatively high temperature around the center, which was a sharp horizontal temperature gradient around a radius of 50 km from the center above 1,000 m at 48 h (Figure 15a).
Increasing the inlet cone angle can improve the light-off characteristics of the catalysts due to high flow velocity and high temperature in the center of the monoliths.
An unpublished high temperature thermoluminiscent signal centered at 400°C induced by UV radiation of pure tetragonal zirconium oxide, is reported.
Small droplets are quickly convected towards the central region and vanish soon, forming a fuel rich and high temperature condition in the center.
In such a case, the metal accumulates at the particle surface when the convective flow is strong (high temperature), and at the particle center when the solute-metal diffusivity is high.
In the combustion synthesis, high temperatures again take center stage.
When frying or grilling meat at a high temperature, a temperature gradient from the outside to the center will be present, which means the meat will dry out on the outside before reaching the desired temperature at the center.
The initial peak broadening can be attributed to the dominance of thermally activated nonradiative recombination centers at the high temperature since they enable excited carriers to be readily recombined at high-energy extended states before reaching low-energy localized states [25].
Meanwhile in the P 2p spectrum, a signal at 128.9 eV corresponding to the P Si bond can be identified, which implies that the P atoms exist in the nc-Si layer in the form of P Si bond after high temperature annealing, while the broad peak centered at 133 eV is the plasmon loss peak of Si 2p photoelectron [21].
As it shown in paper [10], initially dominates generation of nonradiative recombination centers under the procedure of high temperature annealing.
